Mosfet Modeling
نویسنده
چکیده
A n improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in the level 1 and level 3 subcircuit methods used extensively for modeling MOSFETs in power circuits. The new model offers excellent correlation to product data, transistor scaling not possible with other power MOSFET models, robust simulation and reduced simulation time.
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